TC58NS256DC 데이터 시트보기 (PDF) - Toshiba

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TC58NS256DC

TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS

Toshiba 

TC58NS256DC

DEVICE OPERATION

Read Mode (1)

Read mode (1) is set when a 00H command is issued to the Command register. Refer to Figure 3 below for

timing details and the block diagram.

CLE

CE

WE

ALE

RE

RY/BY

N

M

I/O

00H

Busy

Select page

N

Start-address input

M

527

Cell array

Figure 3. Read mode (1) operation

A data transfer operation from the cell array to the register

starts on the rising edge of WE in the third cycle (after the

address information has been latched). The device will be in

Busy state during this transfer period. The CE signal must

stay Low after the third address input and during Busy state.

After the transfer period the device returns to Ready state.

Serial data can be output synchronously with the RE clock

from the start pointer designated in the address input cycle.

Read Mode (2)

CLE

CE

WE

ALE

RE

RY/BY

I/O

N

M

01H

Start-address input

Busy

Select page

N

256 M

527

Cell array

The operation of the device after input of the 01H command is

the same as that of Read mode (1). If the start pointer is to be

set after column address 256, use Read mode (2).

However, for a Sequential Read, output of the next page

starts from column address 0.

Figure 4. Read mode (2) operation

2000-08-27 18/33

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