SD4017 데이터 시트보기 (PDF) - STMicroelectronics
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SD4017 Datasheet PDF : 7 Pages
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SD4017
RF & MICROWAVE TRANSISTORS
806-960 MHz CELLULAR BASE STATIONS
.........GOLD METALLIZATION
DIFFUSED EMITTER BALLASTING
INTERNAL INPUT MATCHING
DESIGNED FOR LINEAR OPERATION
HIGH SATURATED POWER CAPABILITY
COMMON EMITTER CONFIGURATION
POUT = 30 W MIN. WITH 7.5 dB GAIN
ηC = 55% TYPICAL
TYPICAL LOAD MISMATCH CAPABILITY:
20:1 ALL ANGLES RATED CONDITIONS
. 10:1 ALL ANGLES @ ± 20% RATED
VOLTAGE
TYPICAL OVERDRIVE SURVIVABILITY
5 dB
.230 6LFL (M142)
epoxy sealed
ORDER CODE
SD4017
BRANDING
SD4017
PIN CONNECTION
DESCRIPTION
The SD4017 is a gold metallized epitaxial silicon
NPN planar transistor using diffused emitter ballast
resistors for high linearity class AB operation for
cellular base station applications.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symb ol
VCBO
VCEO
VEBO
PDISS
IC
TJ
TSTG
Pa ra met er
Collector-Base Voltage
Collector-Emitter Voltage
Collector-Supply Voltage
Power Dissipation
Device Current
Junction Temperature
Storage Temperature
THERMAL DATA
RTH(j-c) Junction-Case Thermal Resistance
July 19, 1994
1. Collector
2. Base
3. Emitter
Value
48
25
3.5
88
7.5
200
− 65 to +150
2.0
Unit
V
V
V
W
A
°C
°C
°C/W
1/7
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