PHB108NQ03LT 데이터 시트보기 (PDF) - NXP Semiconductors.

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PHB108NQ03LT

N-channel TrenchMOS™ logic level FET

NXP Semiconductors. 

Philips Semiconductors

PHB/PHD/PHU108NQ03LT

N-channel TrenchMOS™ logic level FET

120

Pder

(%)

80

03aa16

120

Ider

(%)

80

03ar58

40

40

0

0

50

100

150

200

Tmb (°C)

Pder = P--------P----t--o--t-------- × 100 %

tot(25 °C)

Fig 1. Normalized total power dissipation as a

function of mounting base temperature

103

ID

(A)

102

Limit RDSon = VDS / ID

0

0

50

100

150

200

Tmb (°C)

Ider = -I-------I---D--------- × 100 %

D(25 °C)

Fig 2. Normalized continuous drain current as a

function of mounting base temperature

03ar59

tp = 10 µs

100 µs

DC

1 ms

10

10 ms

1

1

10

VDS (V)

102

Tmb = 25 °C; IDM is single pulse; VGS = 5 V

Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage

9397 750 14707

Product data sheet

Rev. 03 — 18 April 2005

© Koninklijke Philips Electronics N.V. 2005. All rights reserved.

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