W83178S 데이터 시트보기 (PDF) - Winbond

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W83178S

100 MHZ 3-DIMM SDRAM BUFFER

Winbond 

Preliminary W83178S

6.2.2 Register 1: (1 = Active, 0 = Inactive)

BIT @POWERUP PIN

DESCRIPTION

7

1

27 SDRAM11 (Active/Inactive)

6

1

28 SDRAM10 (Active/Inactive)

5

1

23 SDRAM9 (Active/Inactive)

4

1

22 SDRAM8 (Active/Inactive)

3

1

-

Reserved

2

1

-

Reserved

1

1

19 SDRAM7 (Active/Inactive)

0

1

18 SDRAM6 (Active/Inactive)

6.2.3 Register 2: (1 = Active, 0 = Inactive)

BIT @POWERUP PIN

DESCRIPTION

7

x

-

Reserved

6

1

12 SDRAM12 (Active/Inactive)

5

x

-

Reserved

4

x

-

Reserved

3

x

-

Reserved

2

x

-

Reserved

1

x

-

Reserved

0

x

-

Reserved

7.0 SPECIFICATIONS

7.1 Absolute Maximum Ratings

Stresses greater than those listed in this table may cause permanent damage to the device.

Precautions should be taken to avoid application of any voltage higher than the maximum rated

voltages to this circuit. Maximum conditions for extended periods may affect reliability. Unused inputs

must always be tied to an appropriate logic voltage level (Ground or VDD).

PARAMETER

SYMBOL

RATING

Voltage on any pin with respect to GND

Storage Temperature

VDD, VIN

TSTG

-0.5V to +7.0V

-65° C to +150° C

Ambient Temperature

TB

-55° C to +125° C

Operating Temperature

TA

0° C to +70° C

Note: Exposure to conditions beyond those listed under Absolute Maximum Ratings may adversely affect the life and reliability of the

device.

-4-

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