P4C165 데이터 시트보기 (PDF) - Semiconductor Corporation
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P4C165 Datasheet PDF : 9 Pages
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P4C165
POWER DISSIPATION CHARACTERISTICS VS. SPEED
Symbol
Parameter
Temperature Range
–15 –20 –25 –35
ICC Dynamic Operating Current*
Commercial
Industrial
160 155 150 N/A
N/A 160 155 150
*VCC = 5.5V. Tested with outputs open. f = Max. Switching inputs are 0V and 3V. CE1 = VIL, CE2 = VIH, OE = VIH
Unit
mA
mA
AC ELECTRICAL CHARACTERISTICS—READ CYCLE
(VCC = 5V ± 10%, All Temperature Ranges)(2)
Sym. Parameter
-15
-20
-25
-35
Unit
Min Max Min Max Min Max Min Max
tRC Read Cycle Time
tAA Address Access Time
tAC Chip Enable Access Time
tOH Output Hold from Address Change
tLZ Chip Enable to Output in Low Z
tHZ Chip Disable to Output in High Z
tOE Output Enable Low to Data Valid
tOLZ Output Enable Low to Low Z
tOHZ Output Enable High to High Z
tPU Chip Enable to Power Up Time
tPD Chip Disable to Power Down Time
15
20
25
35
ns
15
20
25
35 ns
15
20
25
35 ns
3
3
3
3
ns
2
2
2
2
ns
8
8
10
15 ns
9
10
13
18 ns
2
2
2
2
ns
9
9
12
15 ns
0
0
0
0
ns
15
20
20
20 ns
Document # SRAM117 Rev OR
3
Page 3 of 9
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