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전자부품 반도체 검색엔진( 무료 PDF 다운로드 ) - 데이터시트뱅크

IRF9630 데이터 시트보기 (PDF) - Intersil

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IRF9630 Datasheet PDF : 7 Pages
1 2 3 4 5 6 7
IRF9630, RF1S9630SM
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNITS
Continuous Source to Drain Current
Pulse Source to Drain Current
(Note 3)
ISD
ISDM
Modified MOSFET Symbol
Showing the Integral Re-
verse P-N Junction Diode
-
-
-6.5
A
D
-
-
-26
A
G
S
Source to Drain Diode Voltage (Note 2)
Reverse Recovery Time
Reverse Recovery Charge
VSD
trr
QRR
TJ = 25oC, ISD = -6.5A, VGS = 0V (Figure 13)
TJ = 150oC, ISD = -6.5A, dISD/dt = 100A/µs
TJ = 150oC, ISD = -6.5A, dISD/dt = 100A/µs
-
-
-1.5
V
-
400
-
ns
-
2.6
-
µC
NOTES:
2. Pulse Test: Pulse width 300µs, duty cycle 2%.
3. Repetitive Rating: Pulse width limited by Max junction temperature. See Transient Thermal Impedance curve (Figure 3).
4. VDD = 50V, starting TJ = 25oC, L = 17.75mH, RG = 25Ω, peak IAS = 6.5A. (Figures 15, 16).
Typical Performance Curves Unless Otherwise Specified
1.2
1.0
0.8
0.6
0.4
0.2
0
0
50
100
150
TC, CASE TEMPERATURE (oC)
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
-10
-8
-6
-4
-2
0
0
50
75
100
125
150
TC, CASE TEMPERATURE (oC)
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
1
0.5
0.2
0.1
0.1
0.05
0.02
0.01
SINGLE PULSE
0.01
10-5
10-4
10-3
10-2
10-1
t1, RECTANGULAR PULSE DURATION (s)
PDM
t1
t2 t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJC x RθJC + TC
1
10
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
4-29

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