K6R1004C1D 데이터 시트보기 (PDF) - Samsung
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K6R1004C1D Datasheet PDF : 9 Pages
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K6R1004C1D
PRELIMINARY
PRELPIrMeliImNAinRarYy
CMOS SRAM
AC CHARACTERISTICS(TA=0 to 70°C, VCC=5.0V±10%, unless otherwise noted.)
TEST CONDITIONS
Parameter
Value
Input Pulse Levels
0V to 3V
Input Rise and Fall Times
3ns
Input and Output timing Reference Levels
1.5V
Output Loads
See below
Output Loads(A)
DOUT
ZO = 50Ω
RL = 50Ω
VL = 1.5V
30pF*
Output Loads(B)
for tHZ, tLZ, tWHZ, tOW, tOLZ & tOHZ
DOUT
255Ω
+5.0V
480Ω
5pF*
* Capacitive Load consists of all components of the
test environment.
READ CYCLE*
Parameter
Symbol
Read Cycle Time
tRC
Address Access Time
tAA
Chip Select to Output
tCO
Output Enable to Valid Output
tOE
UB, LB Access Time
tBA
Chip Enable to Low-Z Output
tLZ
Output Enable to Low-Z Output
tOLZ
UB, LB Enable to Low-Z Output
tBLZ
Chip Disable to High-Z Output
tHZ
Output Disable to High-Z Output
tOHZ
UB, LB Disable to High-Z Output
tBHZ
Output Hold from Address Change
tOH
Chip Selection to Power Up Time
tPU
Chip Selection to Power DownTime tPD
K6R1004C1D-10
Min
Max
10
-
-
10
-
10
-
5
-
5
3
-
0
-
0
-
0
5
0
5
0
5
3
-
0
-
-
10
* The above parameters are also guaranteed at industrial temperature range.
* Including Scope and Jig Capacitance
K6R1004C1D-12
Min
Max
12
-
-
12
-
12
-
6
-
6
3
-
0
-
0
-
0
6
0
6
0
6
3
-
0
-
-
12
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
-5-
Revision 0.2
December 2001
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