IPS511 데이터 시트보기 (PDF) - International Rectifier

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IPS511

FULLY PROTECTED HIGH SIDE POWER MOSFET SWITCH

International Rectifier 

IPS511/IPS511S

Absolute Maximum Ratings

Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters

are referenced to GROUND lead. (Tj = 25oC unless otherwise specified).

Symbol Parameter

Min.

Vout

Voffset

Vin

Vcc max

Iin, max.

Maximum output voltage

Vcc-50

Maximum logic ground to load ground offset Vcc-50

Maximum Input voltage

-0.3

Maximum Vcc voltage

—

Maximum IN current

-5

Vdg

Maximum diagnostic output voltage

-0.3

Idg, max Maximum diagnostic output current

-1

Isd cont. Diode max. permanent current (1)

—

Isd pulsed Diode max. pulsed current (1)

—

ESD1 Electrostatic discharge voltage (Human Body) —

ESD2 Electrostatic discharge voltage (Machine Model) —

Pd

Maximum power dissipation(1)

(TC=25oC) IPS511

—

(rth=80oC/W) IPS511S

—

Tj max. Max. storage & operating junction temp.

-40

Tlead

Lead temperature (soldering 10 seconds)

—

Max.

Vcc+0.3

Vcc+0.3

5.5

50

10

5.5

10

2.2

10

4

0.5

25

1.56

+150

300

Units

V

mA

V

mA

A

kV

W

oC

Test Conditions

C=100pF, R=1500Ω,

C=200pF, R=0Ω, L=10µH

Thermal Characteristics

Symbol Parameter

Rth 1

Rth 2

Rth 1

Rth 2

Rth 3

Thermal resistance junction to case

Thermal resistance junction to ambient

Thermal resistance with standard footprint

Thermal resistance with 1" square footprint

Thermal resistance junction to case

Min.

—

—

—

—

—

Typ.

#

$

60

40

#

Max. Units Test Conditions

—

—

TO-220

— oC/W

—

D2PAK (SMD220)

—

(1) Limited by junction temperature (pulsed current limited also by internal wiring)

2

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