IKB03N120H2 데이터 시트보기 (PDF) - Infineon Technologies

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IKB03N120H2

HighSpeed 2-Technology with soft, fast recovery anti-parallel EmCon HE diode

Infineon Technologies 

IKP03N120H2,

IKW03N120H2

IKB03N120H2

Switching Energy ZVT, Inductive Load

Parameter

Symbol

Conditions

IGBT Characteristic

Turn-off energy

Eoff

VCC=800V,

IC=3A,

VGE=15V/0V,

RG=82Ω,

Cr2)=4nF

Tj=25°C

Tj=150°C

min.

Value

typ.

Unit

max.

mJ

-

0.05

-

-

0.09

-

Power Semiconductors

4

Rev. 2, Mar-04

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