IKA06N60T 데이터 시트보기 (PDF) - Infineon Technologies
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IKA06N60T
Infineon Technologies
IKA06N60T Datasheet PDF : 14 Pages
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IKA06N60T
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TrenchStop series
Dynamic Characteristic
Input capacitance
Output capacitance
Reverse transfer capacitance
Ciss
Coss
Crss
VCE=25V,
VGE=0V,
f=1MHz
-
368
- pF
-
28
-
-
11
-
Gate charge
QGate
VCC=480V, IC=6A
-
42
- nC
VGE=15V
Internal emitter inductance
LE
P-TO-220-3-31
-
7
- nH
measured 5mm (0.197 in.) from case
Short circuit collector current1)
IC(SC)
VGE=15V,tSC≤5µs
-
55
-A
VCC = 400V,
Tj = 25°C
Switching Characteristic, Inductive Load, at Tj=25 °C
Parameter
Symbol
Conditions
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
Anti-Parallel Diode Characteristic
Diode reverse recovery time
Diode reverse recovery charge
Diode peak reverse recovery current
Diode peak rate of fall of reverse
recovery current during tb
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
trr
Qrr
Irrm
dirr/dt
Tj=25°C,
VCC=400V,IC=6A,
VGE=0/15V,
RG=23Ω,
Lσ2)=60nH,
Cσ2)=40pF
Energy losses include
“tail” and diode
reverse recovery.
Tj=25°C,
VR=400V, IF=6A,
diF/dt=550A/µs
min.
-
-
-
-
-
-
-
-
-
-
-
Value
Typ.
9.4
5.6
130
58
0.09
0.11
0.2
123
190
5.3
450
Unit
max.
- ns
-
-
-
- mJ
-
-
- ns
- nC
-A
- A/µs
1) Allowed number of short circuits: <1000; time between short circuits: >1s.
2) Leakage inductance Lσ an d Stray capacity C σ due to dynamic test circuit in Figure E.
Power Semiconductors
3
Rev. 2 Oct-04
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