5962F9568902VXC 데이터 시트보기 (PDF) - Intersil
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5962F9568902VXC Datasheet PDF : 3 Pages
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HS-26CLV32RH, HS-26CLV32EH
Die Characteristics
DIE DIMENSIONS:
78 mils x 123 mils x 21 mils
(1970µm x 3120µm)
INTERFACE MATERIALS:
Glassivation:
Type: PSG (Phosphorus Silicon Glass)
Thickness: 8kÅ ±1kÅ
Substrate:
AVLSI1RA, Silicon backside, VDD backside potential
Metallization Mask Layout
HS-26CLV32RH, HS-26CLV32EH
AIN
VDD
BIN
(1)
(16)
(15)
AIN (2)
AOUT (3)
ENAB (4)
COUT (5)
CIN (6)
Metallization:
Bottom: Mo/TiW
Thickness: 5800Å ±1kÅ
Top: Al/Si/Cu
Thickness: 10kÅ ±1kÅ
Worst Case Current Density:
<2.0 x 105A/cm2
Bond Pad Size:
110µm x 100µm
TABLE 1. HS-26CLV32RH, HS-26CLV32EH PAD COORDINATES
PIN
NUMBER
PAD
NAME
RELATIVE TO PIN 1
X COORDINATES Y COORDINATES
1
AIN
0
0
2
(14) BIN
3
4
AIN
AOUT
ENABLE
-337.1
-337.1
-337.1
-362
-912.5
-1319.3
5
6
(13) BOUT
7
COUT
CIN
CIN
-337.1
-337.1
0
-1774.4
-2233.7
-2595.7
8
GND
418.4
-2596.7
9
DIN
776.4
-2595.7
(12) ENAB
10
DIN
1113.5
-2233.7
11
DOUT
12
ENABLE
1113.5
1113.5
-1774.4
-1319.3
13
(11) DOUT
14
BOUT
BIN
1113.5
1113.5
-898.4
-362
15
BIN
776.4
0
16
VDD
420.2
1
(10) DIN NOTE: Dimensions in microns
(7)
(8)
(9)
CIN
GND
DIN
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3
FN4907.4
January 8, 2013
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