H7P0601DL 데이터 시트보기 (PDF) - Renesas Electronics
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H7P0601DL Datasheet PDF : 11 Pages
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H7P0601DL, H7P0601DS
Silicon P Channel MOS FET
High Speed Power Switching
Features
• Low on-resistance
RDS(on) = 40 mΩ typ.
• Low drive current
• 4.5 V gate drive device can driven from 5 V source
Outline
REJ03G0044-0100Z
Rev.1.00
Aug.05.2003
D
G
S
DPAK-2
4
DPAK-S
4
12 3
12 3
H7P0601DS
H7P0601DL
1. Gate
2. Drain
3. Source
4. Drain
Rev.1.00, Aug.05.2003, page 1 of 10
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