FS10AS-3
Electrical Characteristics
Parameter
Drain-source breakdown voltage
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain voltage
Thermal resistance
Reverse recovery time
(Tch = 25°C)
Symbol Min Typ Max Unit
Test Conditions
V(BR)DSS
IGSS
IDSS
VGS(th)
rDS(ON)
VDS(ON)
| yfs |
Ciss
Coss
150
—
—
—
—
±0.1
—
—
0.1
2.0
3.0
4.0
—
122
170
—
0.61 0.85
—
12
—
—
1250
—
—
175
—
V
ID = 1 mA, VGS = 0 V
µA VGS = ±20 V, VDS = 0 V
mA VDS = 150 V, VGS = 0 V
V
ID = 1 mA, VDS = 10 V
mΩ ID = 5 A, VGS = 10 V
V
ID = 5 A, VGS = 10 V
S
ID = 5 A, VDS = 10 V
pF VDS = 10 V, VGS = 0 V,
pF f = 1MHz
Crss
—
75
—
pF
td(on)
—
25
—
ns VDD = 80 V, ID = 5 A,
tr
td(off)
—
30
—
ns VGS = 10 V,
—
60
—
ns
RGEN = RGS = 50 Ω
tf
—
34
—
ns
VSD
—
1.0
1.5
V
IS = 5 A, VGS = 0 V
Rth(ch-c)
—
—
3.57 °C/W Channel to case
trr
—
100
—
ns IS = 10 A, dis/dt = –100 A/µs
Rev.2.00 Aug 07, 2006 page 2 of 6