EDS2516APTA-75TI-E 데이터 시트보기 (PDF) - Elpida Memory, Inc

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EDS2516APTA-75TI-E

256M bits SDRAM WTR (Wide Temperature Range)

Elpida Memory, Inc 

EDS2516APTA-TI-E

Electrical Specifications

• All voltages are referenced to VSS (GND).

• After power up, execute power up sequence and initialization sequence before proper device operation is achieved

(refer to the Power up sequence).

Absolute Maximum Ratings

Parameter

Voltage on any pin relative to VSS

Supply voltage relative to VSS

Short circuit output current

Power dissipation

Operating ambient temperature

Storage temperature

Symbol

VT

VDD

IOS

PD

TA

Tstg

Rating

Unit

–0.5 to VDD + 0.5 (≤ 4.6 (max.))

V

–0.5 to +4.6

V

50

mA

1.0

W

–40 to +85

°C

–55 to +125

°C

Note

Caution

Exposing the device to stress above those listed in Absolute Maximum Ratings could cause

permanent damage. The device is not meant to be operated under conditions outside the limits

described in the operational section of this specification. Exposure to Absolute Maximum Rating

conditions for extended periods may affect device reliability.

Recommended DC Operating Conditions (TA = –40 to +85°C)

Parameter

Symbol

min.

max.

Unit

Supply voltage

VDD, VDDQ

3.0

3.6

V

VSS, VSSQ

0

0

V

Input high voltage

VIH

2.0

VDD + 0.3

V

Input low voltage

VIL

–0.3

0.8

V

Notes: 1. The supply voltage with all VDD and VDDQ pins must be on the same level.

2. The supply voltage with all VSS and VSSQ pins must be on the same level.

3. VIH (max.) = VDD + 2.0 V for pulse width ≤ 3ns at VDD.

4. VIL (min.) = VSS – 2.0 V for pulse width ≤ 3ns at VSS.

Notes

1

2

3

4

Data Sheet E0677E10 (Ver. 1.0)

4

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