T221160A-30J 데이터 시트보기 (PDF) - Taiwan Memory Technology

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T221160A-30J

64K x 16 DYNAMIC RAM FAST PAGE MODE

Taiwan Memory Technology 

tm TE

CH

VIH

RAS VIL

VIH

CAS VIL

VIH

ADDR VIL

VIH

WE VIL

VIOH

I/O VIOL

VIH

OE VIL

T221160A

READ WRITE CYCLE

(LATE WRITE and READ-MODIFY-WRITE CYCLES)

tRWC

tRAS

tCRP

tASR

tAR

tRAD

tRAH

ROW

tRCD

tCSH

tRSH

tCAS

tASC

tRAL

tCAH

tRCS

COLUMN

tRWD

tCWD

tAWD

tAA

tRAC

tCAC

tCLZ

tCWL

tRWL

tWP

tDS

tDH

VAILD DOUT

VAILD D IN

tOAC

tOFF2

tOEH

tRP

tCRP

ROW

V IH

RAS

V IL

V IH

C A S V IL

V IH

A D D R V IL

V IH

W E V IL

V IO H

I/O V IO L

V IH

O E V IL

FAST-PAGE-MODE READ CYCLE

tR A S C

tC R P

tR C D

tC S H

tC A S

tC P

tP C

tC A S

tC P

tR S H

tC A S

tR P

tC R P

tC P N

tA S R

tA R

tR A D

tR A H

tA S C

tC A H

ROW

COLUM N

tA S C

tC A H

COLUM N

tA S C

tR A L

tC A H

COLUM N

tR C S

O PE N

tA A

tR A C

tC A C

tC L Z

tO A C

tO F F 1

V A IL D

DATA

tO F F 2

tA A

tA C P

tC A C

tC L Z

tO A C

tO F F 1

tC L Z

tA A

tA C P

tC A C

V A IL D

DATA

tO F F 2

tO A C

ROW

tR C H

tR R H

tO F F 1

V A IL D

DATA

tO F F 2

O PE N

D O N 'T C A R E

U N D E F IN E D

Note: 1. tOFF1 is referenced from the rising edge of RAS or CAS , whichever occurs last.

2. tPC can be measured from falling edge of CAS to falling edge of CAS , or from rising edge of

CAS to rising edge of CAS . Both measurements must meet the tPC specification.

Taiwan Memory Technology, Inc. reserves the right P. 9

to change products or specifications without notice.

Publication Date: FEB. 2002

Revision:A

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