BD645(2002) 데이터 시트보기 (PDF) - Bourns, Inc

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BD645
(Rev.:2002)

NPN SILICON POWER DARLINGTONS

Bourns, Inc 

BD645, BD647, BD649, BD651

NPN SILICON POWER DARLINGTONS

50000

10000

TYPICAL CHARACTERISTICS

TYPICAL DC CURRENT GAIN

vs

COLLECTOR CURRENT

TCS130AD

TC = -40°C

TC = 25°C

TC = 100°C

COLLECTOR-EMITTER SATURATION VOLTAGE

vs

COLLECTOR CURRENT

TCS130AB

2·0

tp = 300 µs, duty cycle < 2%

IB = IC / 100

1·5

1000

VCE = 3 V

tp = 300 µs, duty cycle < 2%

100

0·5

1·0

IC - Collector Current - A

Figure 1.

1·0

0·5

10

0·5

1·0

TC = -40°C

TC = 25°C

TC = 100°C

10

IC - Collector Current - A

Figure 2.

BASE-EMITTER SATURATION VOLTAGE

vs

COLLECTOR CURRENT

TCS130AC

3·0

TC = -40°C

TC = 25°C

2·5 TC = 100°C

2·0

1·5

1·0

IB = IC / 100

tp = 300 µs, duty cycle < 2%

0·5

0·5

1·0

10

IC - Collector Current - A

Figure 3.

PRODUCT INFORMATION

MAY 1993 - REVISED SEPTEMBER 2002

Specifications are subject to change without notice.

3

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