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AO3435

20V P-Channel MOSFET

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AO3435

20V P-Channel MOSFET

General Description

The AO3435 uses advanced trench technology to provide excellent RDS(ON), low gate charge and

operation with gate voltages as low as 1.5V. This device is suitable for use in buck convertor

applications.

Features

VDS = -20V

ID = -3.5A

RDS(ON) < 70mΩ

(VGS = -4.5V)

(VGS =- 4.5V)

RDS(ON) < 90mΩ

RDS(ON) < 110mΩ

RDS(ON) < 130mΩ

(VGS = -2.5V)

(VGS = -1.8V)

(VGS = -1.5V)

D

G

S

Absolute Maximum Ratings TA=25°C unless otherwise noted

Parameter

Symbol

10 Sec

Steady State

Drain-Source Voltage

VDS

-20

Gate-Source Voltage

VGS

±8

Continuous Drain TA=25°C

Current A

TA=70°C

Pulsed Drain Current B

-3.5

-2.9

ID

-2.7

-2.3

IDM

-25

TA=25°C

Power Dissipation A TA=70°C

1.4

1

PD

0.9

0.6

Junction and Storage Temperature Range

TJ, TSTG

-55 to 150

Thermal Characteristics

Parameter

Symbol

Typ

Maximum Junction-to-Ambient A t ≤ 10s

Maximum Junction-to-Ambient A Steady-State

RθJA

70

100

Maximum Junction-to-Lead C Steady-State

RθJL

63

Max

90

125

80

Units

V

V

A

W

°C

Units

°C/W

°C/W

°C/W

1/4

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