HN58S256AT-20 데이터 시트보기 (PDF) - Hitachi -> Renesas Electronics

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HN58S256AT-20

256 k EEPROM (32-kword × 8-bit)

Hitachi -> Renesas Electronics 

HN58S256A Series

Write Cycle

Parameter

Symbol Min*2 Typ Max Unit Test conditions

Address setup time

t AS

0

—

—

ns

Address hold time

t AH

150 —

—

ns

CE to write setup time (WE controlled)

t CS

0

—

—

ns

CE hold time (WE controlled)

t CH

0

—

—

ns

WE to write setup time (CE controlled)

t WS

0

—

—

ns

WE hold time (CE controlled)

t WH

0

—

—

ns

OE to write setup time

t OES

0

—

—

ns

OE hold time

t OEH

0

—

—

ns

Data setup time

t DS

150 —

—

ns

Data hold time

t DH

0

—

—

ns

WE pulse width (WE controlled)

t WP

200 —

—

ns

CE pulse width (CE controlled)

t CW

200 —

—

ns

Data latch time

t DL

200 —

—

ns

Byte load cycle

t BLC

0.4 —

30

µs

Byte load window

t BL

100 —

—

µs

Write cycle time

t WC

—

—

15*3 ms

Write start time

t DW

0*4

—

—

ns

Notes: 1. tDF is defined as the time at which the outputs achieve the open circuit conditions and are no

longer driven.

2. Use this device in longer cycle than this value.

3. tWC must be longer than this value unless polling techniques is used. This device automatically

completes the internal write operation within this value.

4. Next read or write operation can be initiated after tDW if polling techniques is used.

5. A6 through A14 are page addresses and these addresses are latched at the first falling edge

of WE.

6. A6 through A14 are page addresses and these addresses are latched at the first falling edge

of CE.

7. See AC characteristics.

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