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전자부품 반도체 검색엔진( 무료 PDF 다운로드 ) - 데이터시트뱅크

VS-60EPU06PBF 데이터 시트보기 (PDF) - Vishay Semiconductors

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VS-60EPU06PBF
Vishay
Vishay Semiconductors Vishay
VS-60EPU06PBF Datasheet PDF : 9 Pages
1 2 3 4 5 6 7 8 9
VS-60EPU06PbF, VS-60EPU06-N3, VS-60APU06PbF, VS-60APU06-N3
www.vishay.com
Vishay Semiconductors
DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
IF = 1 A, dIF/dt = 200 A/μs, VR = 30 V
-
34
Reverse recovery time
trr
TJ = 25 °C
-
81
Peak recovery current
Reverse recovery charge
IRRM
Qrr
TJ = 125 °C
TJ = 25 °C
TJ = 125 °C
TJ = 25 °C
TJ = 125 °C
-
IF = 60 A
-
dIF/dt = 200 A/μs
VR = 200 V
-
-
-
164
7.4
17.0
300
1394
MAX.
45
-
-
-
-
-
-
UNITS
ns
A
nC
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Thermal resistance,
junction to case
Thermal resistance,
case to heatsink
RthJC
RthCS
Mounting surface, flat, smooth
and greased
Weight
Mounting torque
Marking device
Case style TO-247AC modified
Case style TO-247AC
MIN.
-
-
-
-
1.2
(10)
TYP.
-
MAX.
0.63
0.2
-
5.5
-
0.2
-
2.4
-
(20)
60EPU06
60APU06
UNITS
K/W
g
oz.
Nm
(lbf in)
Revision: 15-Aug-11
2
Document Number: 94023
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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