C1227 데이터 시트보기 (PDF) - SavantIC Semiconductor

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C1227

SavantIC Semiconductor  

SavantIC Semiconductor

Silicon NPN Power Transistors

Product Specification

2SC1227

CHARACTERISTICS

Tj=25? unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO Collector-emitter breakdown voltage IC=50mA ; IB=0

V(BR)CBO Collector-base breakdown voltage IC=0.1mA ; IE=0

V(BR)EBO Emitter-base breakdown voltage

IE=0.1mA ; IC=0

VCEsat Collector-emitter saturation voltage IC=5A; IB=0.5A

VBEsat Base-emitter saturation voltage

IC=5A; IB=0.5A

ICBO

Collector cut-off current

VCB=300V; IE=0

IEBO

Emitter cut-off current

VEB=7V; IC=0

hFE

DC current gain

IC=5A ; VCE=5V

MIN TYP. MAX UNIT

200

V

300

V

7

V

1.0

V

1.5

V

20

µA

20

µA

50

2

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