RFL1N18 데이터 시트보기 (PDF) - Intersil

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RFL1N18

1A, 180V and 200V, 3.65 Ohm, N-Channel Power MOSFETs

Intersil 

Semiconductor

January 1998

Features

• 1A, 180V and 200V

• rDS(ON) = 3.65Ω

• SOA is Power Dissipation Limited

• Nanosecond Switching Speeds

• Linear Transfer Characteristics

• High Input Impedance

• Majority Carrier Device

• Related Literature

- TB334 “Guidelines for Soldering Surface Mount

Components to PC Boards”

Ordering Information

PART NUMBER

PACKAGE

BRAND

RFL1N18

TO-205AF

RFL1N18

RFL1N20

TO-205AF

RFL1N20

NOTE: When ordering, use the entire part number.

RFL1N18,

RFL1N20

1A, 180V and 200V, 3.65 Ohm,

N-Channel Power MOSFETs

Description

These are N-Channel enhancement mode silicon gate

power field effect transistors designed for applications such

as switching regulators, switching converters, motor drivers,

relay drivers and drivers for high power bipolar switching

transistors requiring high speed and low gate drive power.

These types can be operated directly from integrated

circuits.

Formerly developmental type TA09289.

Symbol

D

G

S

Packaging

JEDEC TO-205AF

DRAIN

(CASE)

GATE

SOURCE

CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.

Copyright © Harris Corporation 1997

5-1

File Number 1442.2

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