A1374 데이터 시트보기 (PDF) - Hitachi -> Renesas Electronics

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A1374

Silicon PNP Epitaxial

Hitachi -> Renesas Electronics 

2SA1374

Absolute Maximum Ratings (Ta = 25°C)

Item

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Collector current

Base current

Collector power dissipation

Junction temperature

Storage temperature

Symbol

VCBO

VCEO

VEBO

IC

IB

PC

Tj

Tstg

Ratings

Unit

–55

V

–55

V

–5

V

–100

mA

–30

mA

300

mW

150

°C

–55 to +150

°C

Electrical Characteristics (Ta = 25°C)

Item

Symbol Min Typ

Collector to base breakdown V(BR)CBO –55 —

voltage

Collector to emitter breakdown V(BR)CEO –55 —

voltage

Emitter to base breakdown

V(BR)EBO

–5

—

voltage

Collector cutoff current

I CBO

—

—

Emitter cutoff current

I EBO

—

—

DC current transfer ratio

hFE*1

160 —

Base to emitter voltage

VBE

—

–0.66

Collector to emitter saturation VCE(sat)

—

voltage

–0.1

Gain bandwidth product

fT

—

250

Collector output capacitance Cob

—

2.5

Note: 1. The 2SA1374 is grouped by hFE as follows.

C

D

160 to 320 250 to 500

Max

—

—

—

–0.1

–0.05

500

–0.75

–0.5

—

—

Unit

V

V

V

µA

µA

V

V

MHz

pF

Test conditions

IC = –10 µA, IE = 0

IC = –1 mA, RBE = ∞

IE = –10 µA, IC = 0

VCB = –18 V, IE = 0

VEB = –2 V, IE = 0

VCE = –12 V, IC = –2 mA

VCE = –12 V, IC = –2 mA

IC = –10 mA, IB = –1 mA

VCE = –12 V, IC = –2 mA

VCB = –10 V, IE = 0, f = 1 MHz

See characteristic curves of 2SA836.

2

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