TH58NVG1S3AFT 데이터 시트보기 (PDF) - Toshiba
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TH58NVG1S3AFT Datasheet PDF : 32 Pages
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BLOCK DIAGRAM
I/O1
to
I/O8
CE
CLE
ALE
WE
RE
WP
RY / BY
I/O
Control
circuit
Logic
control
RY / BY
TH58NVG1S3AFT05
Status register
Address register
Command register
Control
circuit
VCC VSS
Column buffer
Column decoder
Data register
Sense amp
Memory
cell array
HV generator
ABSOLUTE MAXIMUM RATINGS
SYMBOL
RATING
VCC
VIN
VI/O
PD
TSOLDER
TSTG
TOPR
Power Supply Voltage
Input Voltage
Input /Output Voltage
Power Dissipation
Soldering Temperature (10s)
Storage Temperature
Operating Temperature
VALUE
0.6 to 4.6
0.6 to 4.6
0.6 V to VCC 0.3 V (≦ 4.6 V)
0.3
260
-55 to 150
0 to 70
CAPACITANCE *(Ta 25°C, f 1 MHz)
SYMB0L
PARAMETER
CONDITION
MIN
CIN
Input
VIN 0 V
COUT
Output
VOUT 0 V
* * This parameter is periodically sampled and is not tested for every device.
MAX
20
20
UNIT
V
V
V
W
°C
°C
°C
UNIT
pF
pF
xThe products described in this document are subject to the foreign exchange and foreign trade laws.
xThe information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by
TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its
use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or
others.
xThe information contained herein is subject to change without notice.
2003-05-19A 2/32
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