DIM800DDM17-A000(2002) 데이터 시트보기 (PDF) - Dynex Semiconductor

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DIM800DDM17-A000
(Rev.:2002)

Dual Switch IGBT Module

Dynex Semiconductor 

DIM800DDM17-A000

1400

100

Diode

1200

Transistor

1000

800

10

600

1

0.001

IGBT

Diode

1

2

3

4

Ri (˚C/KW) 0.4391 3.1937 4.1465 10.2356

τi (ms)

0.045 2.8869 21.7141 152.6381

Ri (˚C/KW) 1.5612 5.7426 6.999 25.6068

τi (ms) 0.0063516 1.4746 13.9664 111.7517

0.01

0.1

1

10

Pulse width, tp - (s)

400

200

0

0

20 40 60 80 100 120 140 160

Case temperature, Tcase - (˚C)

Fig. 11 Transient thermal impedance

Fig. 12 DC current rating vs case temperature

8/10

Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.

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