BSZ019N03LS 데이터 시트보기 (PDF) - Infineon Technologies

부품명

상세내역

일치하는 목록

BSZ019N03LS

n-Channel Power MOSFET

Infineon Technologies 

OptiMOS™ Power-MOSFET

BSZ019N03LS

2

Maximum ratings

at Tj = 25 °C, unless otherwise specified.

Table 2 Maximum ratings

Parameter

Symbol

Continuous drain current

ID

Pulsed drain current1)

Avalanche current, single pulse2)

Avalanche energy, single pulse

Gate source voltage

Power dissipation

ID,pulse

IAS

EAS

VGS

Ptot

Operating and storage temperature Tj,Tstg

IEC climatic category; DIN IEC 68-1

1) See figure 3 for more detailed information

2) See figure 13 for more detailed information

Min.

-

-

-

-

-

Values

Typ. Max.

-

40

-

40

-

40

-

40

-

22

-

-

160

-

-

20

-

-

150

-20 -

20

-

-

69

-

-

2.1

-55 -

150

55/150/56

Unit Note / Test Condition

A

VGS=10 V, TC=25 °C

VGS=10 V, TC=100 °C

VGS=4.5 V, TC=25 °C

VGS=4.5 V, TC=100 °C

VGS=4.5 V, TA=25 °C,

RthJA=60 K/W)

TC=25 °C

mJ ID=20 A,RGS=25 Ω

V

W TC=25 °C

TA=25 °C, RthJA=60 K/W

°C

3

Thermal characteristics

Table 3 Thermal characteristics

Parameter

Symbol

Min.

Values

Typ.

Max.

Unit Note /

Test Condition

Thermal resistance, junction - case RthJC

-

-

1.8

°K/W

Device on PCB

RthJA

-

-

60

6 cm2 cooling area1)

1) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection.

PCB is vertical in still air

Final Data Sheet

2

2.1, 2011-09-21

Share Link: