IRF7335D1 데이터 시트보기 (PDF) - International Rectifier

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IRF7335D1

Dual FETKY Co-Packaged Dual MOSFET Plus Schottky Diode

International Rectifier 

IRF7335D1

Typical Characteristics

Q1 - Control FET

2.0

ID = 10A

VGS = 4.5V

1.5

1.0

Q2 - Synchronous FET & Schottky

2.0

ID = 10A

1.5

1.0

0.5

0.5

-60 -40 -20 0 20 40 60 80 100 120 140 160

TJ , Junction Temperature (°C)

Fig 19. Normalized On-Resistance Vs. Temperature

0.030

V GS = 4.5V

0.0

-60 -40 -20 0 20 40 60 80 100 120 140 160

TJ, Junction Temperature

( °C)

Fig 20. Normalized On-Resistance Vs. Temperature

0.011

0.025

0.020

0.015

VGS= 4.5V

0.010

VGS = 4.5V

0.010

0

20

40

60

80

ID , Drain Current (A)

Fig 21. Typical On-Resistance Vs. Drain Current

0.03

0.009

0

20

40

60

80

100

ID , Drain Current (A)

Fig 22. Typical On-Resistance Vs. Drain Current

0.015

0.02

ID = 10A

0.01

0.010

ID = 10A

0.00

2.0

4.0

6.0

8.0

10.0

VGS, Gate -to -Source Voltage (V)

Fig 23. Typical On-Resistance Vs. Gate Voltage

6

0.005

3.0

3.5

4.0

4.5

VGS, Gate -to -Source Voltage (V)

Fig 24. Typical On-Resistance Vs. Gate Voltage

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