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W29EE01190B

128K x 8 CMOS FLASH MEMORY

Winbond 

W29EE011

128K × 8 CMOS FLASH MEMORY

GENERAL DESCRIPTION

The W29EE011 is a 1-megabit, 5-volt only CMOS flash memory organized as 128K × 8 bits. The

device can be programmed and erased in-system with a standard 5V power supply. A 12-volt VPP is

not required. The unique cell architecture of the W29EE011 results in fast program/erase operations

with extremely low current consumption (compared to other comparable 5-volt flash memory

products). The device can also be programmed and erased using standard EPROM programmers.

FEATURES

• Single 5-volt program and erase operations

• Fast page-write operations

− 128 bytes per page

− Page program cycle: 10 mS (max.)

− Effective byte-program cycle time: 39 µS

− Optional software-protected data write

• Fast chip-erase operation: 50 mS

• Read access time: 90/150 nS

• Page program/erase cycles: 1K/10K

• Ten-year data retention

• Software and hardware data protection

• Low power consumption

− Active current: 25 mA (typ.)

− Standby current: 20 µA (typ.)

• Automatic program timing with internal VPP

generation

• End of program detection

− Toggle bit

− Data polling

• Latched address and data

• TTL compatible I/O

• JEDEC standard byte-wide pinouts

• Available packages: 32-pin 600 mil DIP,

TSOP, and PLCC

Publication Release Date: July 1999

-1-

Revision A12

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