G8370-02 데이터 시트보기 (PDF) - Hamamatsu Photonics

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G8370-02

Large active areas from φ1 to φ5 mm

Hamamatsu Photonics 

PHOTODIODE

InGaAs PIN photodiode

G8370 series

Large active areas from φ1 to φ5 mm

InGaAs PIN photodiodes have large shunt resistance and feature very low noise. Hamamatsu provides various types of InGaAs PIN photodiodes

with active areas from φ1 to φ5 mm.

Features

l Low noise, low dark current

l Large active area

l Various active area sizes available

Applications

l Laser monitor

l Optical power meter

l Laser diode life test

s Specifications / Absolute maximum ratings

Type No.

Dimensional

outline/

Window

material *1

Package

G8370-01

G8370-02

G8370-03

G8370-05

➀/K

TO-18

➁/K

TO-5

➂/K

TO-8

Active area

(mm)

φ1

φ2

φ3

φ5

Absolute maximum ratings

Reverse

voltage

VR Max.

Operating

temperature

Topr

Storage

temperature

Tstg

(V)

(°C)

(°C)

10

5

-40 to +85

-55 to +125

2

s Electrical and optical characteristics (Typ. Ta=25 °C, unless otherwise noted)

Type No.

G8370-01

G8370-02

G8370-03

G8370-05

Spectral

response

range

Peak

sensitivity

wavelength

λp

Photo

sensitivity

S

Dark

current

ID

VR=1 V

Cut-off

frequency

fc

VR=1 V

RL=50 Ω

-3 dB

Terminal

capacitance

Ct

VR=1 V

f=1 MHz

Shunt

resistance

Rsh

VR=10 mV

D∗

λ=λp

1.3 µm λ=λp Typ. Max.

(µm)

(µm) (A/W) (A/W) (nA) (nA) (MHz)

(pF)

(MΩ) (cm ·H z 1/2/W )

1 *2 5 *2

35 *2

90 *2

100

0.9 to 1.7 1.55

0.9 0.95 5 25

15 75

4

2

550

1000

25

10

5 × 1012

25 125

0.6

3500

3

*1: Window material K: borosilicate glass with anti-reflective coating (optimized for 1.55 µm peak)

*2: VR=5 V

NEP

λ=λp

(W/Hz1/2)

2 × 10-14

4 × 10-14

6 × 10-14

1 × 10-13

1

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