GP800DDS12 데이터 시트보기 (PDF) - Dynex Semiconductor
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GP800DDS12 Datasheet PDF : 11 Pages
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GP800DDS12
PACKAGE DETAILS
For further package information, please contact your local Customer Service Centre. All dimensions in mm, unless stated
otherwise. DO NOT SCALE.
62
62
15 15
5
6
3
7
8
9
12
4
11
10
14 11.5
35
6x M4
1
2
20
4x M8
6x Ø7
5
140
Nominal weight: 1600g
Module outline type code: D
ASSOCIATED PUBLICATIONS
Title
Electrostatic handling precautions
An introduction to IGBTs
IGBT ratings and characteristics
Heatsink requirements for IGBT modules
Calculating the junction temperature of power semiconductors
Gate drive considerations to maximise IGBT efficiency
Parallel operation of IGBTs – punch through vs non-punch through characteristics
Guidance notes for formulating technical enquiries
Principle of rating parallel connected IGBT modules
Short circuit withstand capability in IGBTs
Driving high power IGBTs with concept gate drivers
Application Note
Number
AN4502
AN4503
AN4504
AN4505
AN4506
AN4507
AN4508
AN4869
AN5000
AN5167
AN5190
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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