D30PF03L 데이터 시트보기 (PDF) - STMicroelectronics
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D30PF03L Datasheet PDF : 13 Pages
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Electrical ratings
1
Electrical ratings
STD30PF03LT4 - STD30PF03L-1
Table 2. Absolute maximum ratings
Symbol
Parameter
VDS
Drain-source voltage (VGS=0)
VGS
Gate-source voltage
ID (1)
Drain current (continuous) at TC = 25 °C
ID (1) Drain current (continuous) at TC = 100 °C
IDM (2) Drain current (pulsed)
PTOT Total dissipation at TC=25 °C
Derating factor
EAS (3) Single pulse avalanche energy
Tstg
Storage temperature
Tj
Max. operating junction temperature
1. Current limited by wire bonding
2. Pulse width limited by safe operating area
3. Starting TJ = 25 °C, ID = 12 A, VDD =15 V
Value
30
± 16
24
24
96
70
0.47
850
-55 to 175
175
Unit
V
V
A
A
A
W
W/°C
mJ
°C
°C
Table 3. Thermal data
Symbol
Parameter
Rthj-case Thermal resistance junction-case max
Rthj-amb Thermal resistance junction-ambient max
Rthj-pcb Thermal resistance junction-pcb max
Tl
Maximum lead temperature for soldering purpose
1. When mounted on FR- 4board of 1 inch².
Max value
DPAK
IPAK
2.14
--
100
50(1)
--
--
275
Unit
°C/W
°C/W
°C/W
°C/W
Note:
2/13
For the p-channel Power MOSFET actual polarity of voltages and current has to be reversed
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