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2SK3176 데이터시트 - Toshiba

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2SK3176 Silicon N Channel MOS Type (?-MOS V) Field Effect Transistor Toshiba
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2SK3176 데이타시트 PDF : 2SK3176 pdf   
2SK3176 image

Switching Regulator, DC-DC Converter and Motor Drive Applications

• Low drain-source ON resistance: RDS (ON)= 38 mΩ(typ.)
• High forward transfer admittance: |Yfs| = 30 S (typ.)
• Low leakage current: IDSS= 100 mA (max) (VDS= 200 V)
•Enhancement-mode: Vth= 1.5 to 3.5 V   (VDS= 10 V, ID= 1 mA)

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"2SK3176" 관련 부품명

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2SK3743 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSV) 2SK3743 View Unspecified
3SK249 Silicon N-Channel Dual Gate MOS Type Field Effect Transistor 3SK249 View New Jersey Semiconductor
2SK941 FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE(L²-π-MOSIII) 2SK941 View Unspecified

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