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2SJ200-O 데이터시트 - Toshiba

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2SJ200-O TOSHIBA Field Effect Transistor Silicon P Channel MOS Type Toshiba
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2SJ200-O 데이타시트 PDF : 2SJ200-O pdf   
2SJ200 image

High Power Amplifier Application

  High breakdown voltage  : VDSS= −180 V
  High forward transfer admittance  : |Yfs| = 4.0 S (typ.)
  Complementary to 2SK1529

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"2SJ200-O" 관련 부품명

부품번호상세내용PDF제조사
2SK3743 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSV) 2SK3743 View Unspecified
2SJ512 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2−π−MOSV) 2SJ512 View Unspecified
2SK1348 Field Effect Transistor Silicon N Channel MOS Type(L2-π-MOS III) 2SK1348 View Unspecified
2SK1741 N channel MOS type silicon field effect transistor 2SK1741 View SANYO -> Panasonic
2SK2320 Field Effect Transistor Silicon N-Channel MOS Type 2SK2320 View Unspecified
2SK1739A FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK1739A View SANYO -> Panasonic
2SK1358 Field Effect Transistor Silicon N Channel MOS Type 2SK1358 View New Jersey Semiconductor
2SK941 FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE(L²-π-MOSIII) 2SK941 View Unspecified
3SK249 Silicon N-Channel Dual Gate MOS Type Field Effect Transistor 3SK249 View New Jersey Semiconductor
2SK2413 MOS FIELD EFFECT TRANSISTOR / N-Channel MOS Field Effect Transistor 2SK2413 View NEC => Renesas Technology

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