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STW7NB80 데이터시트 - STMicroelectronics

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STW7NB80 N-CHANNEL 800V - 1.6? - 6.5A - TO-247 PowerMESH? MOSFET ST-Microelectronics
STMicroelectronics ST-Microelectronics
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DESCRIPTION
Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.

■ TYPICAL RDS(on) = 1.6 Ω
■ EXTREMELY HIGH dv/dt CAPABILITY
■ ± 30V GATE TO SOURCE VOLTAGE RATING
■ 100% AVALANCHE TESTED
■ VERY LOW INTRINSIC CAPACITANCES
■ GATE CHARGE MINIMIZED

APPLICATIONS
■ HIGH CURRENT, HIGH SPEED SWITCHING
■ SWITCH MODE POWER SUPPLIES (SMPS)
■ DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE

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"STW7NB80" 관련 부품명

부품번호상세내용PDF제조사
P5NB80 N - CHANNEL 800V - 1.8Ω - 5A - TO-220/TO-220FP PowerMESH™ MOSFET P5NB80 View Unspecified
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IRFP450 N - CHANNEL 500V - 0.33Q - 14A - TO-247 PowerMESH™ MOSFET IRFP450 View New Jersey Semiconductor
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P10NK80 N-channel 800V - 0.78Ω- 9A - TO-220/FP-TO-247 Zener-protected superMESH MOSFET P10NK80 View Unspecified
IRF830 N - CHANNEL 500V - 1.35ohm - 4.5A - TO-220 PowerMESH] MOSFET IRF830 View Silikron Semiconductor Co.,LTD.
FQAF6N80 800V N-Channel MOSFET FQAF6N80 View Fairchild Semiconductor
FQPF6N80 800V N-Channel MOSFET FQPF6N80 View Fairchild Semiconductor
FQAF10N80 800V N-Channel MOSFET FQAF10N80 View Fairchild Semiconductor
FQA6N80 800V N-Channel MOSFET FQA6N80 View Fairchild Semiconductor

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