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STP6NB80 Datasheet PDF - STMicroelectronics

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STP6NB80 Datasheet PDF : STP6NB80 pdf     
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DESCRIPTION
Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an ad vanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprieraty edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.

■ TYPICAL RDS(on) = 1.6 Ω
■ EXTREMELY HIGH dv/dt CAPABILITY
■ 100% AVALANCHE TESTED
■ VERY LOW INTRINSIC CAPACITANCES

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N - CHANNEL 800V - 1.8Ω - 5A - TO-220/TO-220FP PowerMESH™ MOSFET
Unspecified
N - CHANNEL 800V - 3Ω - 4A - TO-220/TO-220FP PowerMESH MOSFET
Unspecified
N-CHANNEL 600V - 1.8Ω - 4.2A TO-220/TO-220FP/I2PAK PowerMesh™II MOSFET
Unspecified
N - CHANNEL 500V - 1.35ohm - 4.5A - TO-220 PowerMESH] MOSFET
Silikron Semiconductor Co.,LTD.
N-CHANNEL 250V - 0.23Ω - 16A TO-220 / TO-220FP MESH OVERLAY™ MOSFET
Unspecified
N-CHANNEL 60V - 0.08 Ω - 16A TO-220/TO-220FP STripFET™ II POWER MOSFET
Unspecified
N-CHANNEL 800V - 0.651} - 10.5A TO-220 / D2PAK / TO-247 Zener-Protected SuperMESH™ Power MOSFET
New Jersey Semiconductor
N-channel 800V - 0.78Ω- 9A - TO-220/FP-TO-247 Zener-protected superMESH MOSFET
Unspecified
N-channel MOS-FET 800V 2,2Ω 7A 80W
Fuji Electric
POWER MOSFET
Suntac Electronic

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