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LET21008 Datasheet PDF - STMicroelectronics
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LET21008 Datasheet PDF :
DESCRIPTION
The LET21008 is a common source N-Channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 26 V in common source mode at frequencies up to 2.1 GHz. LET21008 boasts the excellent gain, linearity and reliability of ST’s latest LDMOS technology mounted in the innovative leadless SMD plastic package, PowerFLAT™. LET21008’s superior linearity performance makes it an ideal solution for base station applications.
Designed for GSM / EDGE / IS-97 / WCDMA applications
• EXCELLENT THERMAL STABILITY
• COMMON SOURCE CONFIGURATION
• POUT = 8 W with 11 dB gain @ 2170 MHz / 26V
• NEW LEADLESS PLASTIC PACKAGE
• ESD PROTECTION
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Thermally-Enhanced High Power RF LDMOS FETs 130 W, 869 – 960 MHz
Infineon Technologies
Thermally-Enhanced High Power RF LDMOS FETs 240 W, 1930 – 1990 MHz
Infineon Technologies
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