홈 >>> ST-Microelectronics >>> LET21008 PDF

LET21008 데이터시트 - STMicroelectronics

부품번호	상세내용	제조사
LET21008	RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package	STMicroelectronics

다른 PDF	존재하지 않습니다.
LET21008 데이타시트 PDF :

DESCRIPTION
The LET21008 is a common source N-Channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 26 V in common source mode at frequencies up to 2.1 GHz. LET21008 boasts the excellent gain, linearity and reliability of ST’s latest LDMOS technology mounted in the innovative leadless SMD plastic package, PowerFLAT™. LET21008’s superior linearity performance makes it an ideal solution for base station applications.

Designed for GSM / EDGE / IS-97 / WCDMA applications

• EXCELLENT THERMAL STABILITY
• COMMON SOURCE CONFIGURATION
• POUT = 8 W with 11 dB gain @ 2170 MHz / 26V
• NEW LEADLESS PLASTIC PACKAGE
• ESD PROTECTION

"LET21008" 관련 부품명

부품번호	상세내용	PDF	제조사
PTF081301E	Thermally-Enhanced High Power RF LDMOS FETs 130 W, 869 – 960 MHz		Infineon Technologies
PTFA192401E	Thermally-Enhanced High Power RF LDMOS FETs 240 W, 1930 – 1990 MHz		Infineon Technologies
2508051107Y0	RF Power LDMOS Transistors		Freescale Semiconductor
MRFE6VP8600HR6	RF Power LDMOS Transistors		Freescale Semiconductor
L8821P	SILICON GATE ENHANCEMENT MODE RF POWER TRANSISTOR LDMOS		Polyfet RF Devices
L225	SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR		Polyfet RF Devices
LP802	SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR		Polyfet RF Devices
LK722	SILICON GATE ENHANCEMENT MODE RF POWER TRANSISTOR LDMOS		Polyfet RF Devices
L2821	SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR		Polyfet RF Devices
L2801	SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR		Polyfet RF Devices

링크 공유 :

English 简体中文日本語 русский español