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NE5550979A-T1 데이터시트 - Renesas Electronics

부품번호상세내용제조사
NE5550979A-T1 Silicon Power LDMOS FET Renesas
Renesas Electronics Renesas
NE5550979A-T1 PDF 데이터시트 : NE5550979A-T1 pdf   
NE5550979A image

FEATURES
•  High Output Power   : Pout = 39.5 dBm TYP. (VDS = 7.5 V, IDset= 200 mA, f = 460 MHz, Pin = 25 dBm)
•  High power added efficiency  : ηadd = 66% TYP. (VDS= 7.5 V, IDset= 200 mA, f = 460 MHz, Pin = 25 dBm)
•  High Linear gain   : GL = 22 dB TYP. (VDS = 7.5 V, IDset = 200 mA, f = 460 MHz, Pin = 10 dBm)
•  High ESD tolerance   : ESD tolerance > 8 kV (IEC61000-4-2, Contact discharge)
•  Suitable for VHF to UHF-BAND Class-AB power amplifier.

APPLICATIONS
•  150 MHz Band Radio System
•  460 MHz Band Radio System
•  900 MHz Band Radio System

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