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HAF2005 데이터시트 - Renesas Electronics
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| HAF2005 | Silicon N Channel MOS FET Series Power Switching |  Renesas Electronics  |
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Description
This FET has the over temperature shut-down capability sensing to the junction temperature.
This FET has the built-in over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case of high junction temperature like applying over power consumption, over current etc.
Features
• Logic level operation (4 to 6 V Gate drive)
• High endurance capability against to the short circuit
• Built-in the over temperature shut-down circuit
• Latch type shut-down operation (Need 0 voltage recovery)
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