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MSC23V43257D-XXBS8 Datasheet PDF - Oki Electric Industry

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MSC23V43257D-XXBS8 Datasheet PDF : MSC23V43257D-XXBS8 pdf     
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DESCRIPTION
The MSC23V43257D-xxBS8 is a 4,194,304-word x 32-bit CMOS dynamic random access memory module which is composed of eight 16Mb(4Mx4) DRAMs in TSOP packages mounted with eight decoupling capacitors. This is an 100-pin dual in-line memory module. This module supports any application where high density and large capacity of storage memory are required.

FEATURES
• 4,194,304-word x 32-bit organization
• 100-pin Dual In-line Memory Module
• Gold tab
• Single 3.3V power supply, ±0.3V tolerance
• Input : LVTTL compatible
• Output : LVTTL compatible, 3-state
• Refresh : 2048cycles/32ms
• /CAS before /RAS refresh, hidden refresh, /RAS only refresh capability
• Fast page mode with EDO, read modify write capability
• Multi-bit test mode capability
• Serial Presence Detect

 

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제조사
4,194,304-word X 4-bit Dynamic RAM : Fast Page Mode with EDO
Unspecified
4,194,304-word X 4-bit Dynamic RAM : Fast Page Mode with EDO
Nanya Technology
33,554,432-BIT (2,097,152 - WORD BY 16-BIT/4,194,304-WORD BY 8-BIT) CMOS 3.3V-ONLY FLASH MEMORY & 4,194,304-BIT (262,144-WORD BY 16-BIT/524,288-WORD BY 8-BIT) CMOS SRAM Stacked - µ MCP (micro Multi Chip Package)
Renesas Electronics
4M x 4-Bit Dynamic RAM 2k & 4k Refresh (Hyper Page Mode- EDO)
Siemens AG
4M x 4 DYNAMIC RAM EDO PAGE MODE
Taiwan Memory Technology
4,194,304 WORD x 1 BIT DYNAMIC RAM
Toshiba
4,194,304 WORD x 1 BIT DYNAMIC RAM
Toshiba
4,194,304 WORD X 4 BIT DYNAMIC RAM
Toshiba
4,194,304 WORD x 1 BIT DYNAMIC RAM
Toshiba
4,194,304 WORD x 1 BIT DYNAMIC RAM
Toshiba

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