These power transistors are produced by PPCs DOUBLE DIFFUSED PLANAR process. This technology produces high voltage devices with excellent switching speeds, frequency response, gain linearity, saturation voltages, high current gain, and safe operating areas. They are intended for use in Commercial, Industrial, and Military power switching, amplifier, and regulator applications.
Ultrasonically bonded leads and controlled die mount techniques are utilized to further increase the SOA capability and inherent reliability of these devices. The temperature range to 200°C permits reliable operation in high ambients, and the hermetically sealed package insures maximum reliability and long life.
● Low Saturation Voltage: 0.6 VCE(sat) @ IC = 1.0 Amp
● High Gain Characteristics: hFE @ IC = 250 mA: 30-100
● Excellent Safe Area Limits
● Low Collector Cutoff Current: 100 nA (Max) 2N3741A
● Medium-Power Amplifiers