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IRFP150V 데이터시트 - International Rectifier

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IRFP150V HEXFET® Power MOSFET IR
International Rectifier IR
IRFP150V PDF 데이터시트 : IRFP150V pdf   
IRFP150V image

VDSS = 100V
RDS(on) = 24mΩ
ID = 47A

Description
Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-247 package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220 devices. The TO-247 is similar but superior to the earlier TO-218 packcage because of its isolated mounting hole.

Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated

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