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IRFP450B 데이터시트 - Fairchild Semiconductor

부품번호상세내용제조사
IRFP450B 500V N-Channel MOSFET Fairchild
Fairchild Semiconductor Fairchild
IRFP450B PDF 데이터시트 : IRFP450B pdf   
IRFP450B image

General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies, power factor correction and electronic lamp ballasts based on half bridge.

Features
• 14A, 500V, RDS(on)= 0.39Ω@VGS= 10 V
• Low gate charge ( typical 87 nC)
• Low Crss ( typical 60 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability

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