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FDS8882 데이터시트 - Fairchild Semiconductor

FDS8882 N-Channel PowerTrench® MOSFET 30 V, 9 A, 20.0 mΩ Fairchild
Fairchild Semiconductor Fairchild
FDS8882 PDF 데이터시트 : FDS8882 pdf   
FDS8882 image

General Description
The FDS8882 has been designed to minimize losses in power conversion application. Advancements in both  silicon and package technologies have been combined to offer the lowest rDS(on)while maintaining excellent switching performance.

„Max rDS(on) =20.0 mΩat VGS = 10 V, ID= 9 A
„Max rDS(on) =22.5 mΩat VGS = 4.5 V, ID= 8 A
„High performance trench technology for extremely low rDS(on) and fast switching
„High power and current handling capability
„Termination is Lead-free and RoHS Compliant

„Notebook System Regulators
„DC/DC Converters

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