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FDS6676AS 데이터시트 - Fairchild Semiconductor

FDS6676AS 30V N-Channel PowerTrench® SyncFET™ Fairchild
Fairchild Semiconductor Fairchild
다른 PDF  2005   2005-4  
FDS6676AS PDF 데이터시트 : FDS6676AS pdf   
FDS6676AS image

General Description
The FDS6676AS is designed to replace a single SO-8 MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON)and low gate charge. The FDS6676AS includes an integrated Schottky diode using Fairchild’s monolithic SyncFET technology.

• 14.5 A, 30 V.
    RDS(ON) max= 6.0 mΩ @ VGS = 10 V
    RDS(ON) max= 7.25 mΩ @ VGS = 4.5 V
• Includes SyncFET Schottky body diode
• Low gate charge (45nC typical)
• High performance trench technology for extremely low RDS(ON)and fast switching
• High power and current handling capability
• RoHS Compliant

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"FDS6676AS" 관련 부품명

STS8C5H30L N-channel 30V - 0.018 Ω - 8A/p-channel 30V - 0.045 Ω - 5A - SO-8 Low gate charge STripFET™ III MOSFET STS8C5H30L View STMicroelectronics
AON7400A 30V N-Channel MOSFET AON7400A View Unspecified
AON7422E 30V P-Channel MOSFET AON7422E View Unspecified
AOD496A 30V N-Channel MOSFET AOD496A View Unspecified
AO4466 30V N-Channel MOSFET AO4466 View Unspecified
AON6500 30V N-Channel AlphaMOS AON6500 View Unspecified
AO4459 30V P-Channel MOSFET AO4459 View Unspecified
AO4447A 30V P-Channel MOSFET AO4447A View Unspecified
AO4427 30V P-Channel MOSFET AO4427 View Unspecified
AO4420A 30V N-Channel MOSFET AO4420A View Unspecified

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