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FDS4935BZ 데이터시트 - Fairchild Semiconductor

부품번호상세내용제조사
FDS4935BZ Dual 30V P-Channel PowerTrench MOSFET Fairchild
Fairchild Semiconductor Fairchild
FDS4935BZ PDF 데이터시트 : FDS4935BZ pdf   
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General Description
This P-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional switching PWM controllers, and battery chargers.
These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON)specifications.
The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency.

Features
–6.9 A, –30 V.  RDS(ON)= 22 m:@ VGS= –10 V
                    RDS(ON)= 35 m:@ VGS= – 4.5 V
Extended VGSSrange (–25V) for battery applications
ESD protection diode (note 3)
High performance trench technology for extremely low RDS(ON)
High power and current handling capability

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