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NT128D64S88A2GM 200pin One Bank Unbuffered DDR SO-DIMM Based on DDR266/200 16Mx8 SDRAM Nanya
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NT128D64S88A2GM is an unbuffered 200-Pin Double Data Rate (DDR) Synchronous DRAM Dual In-Line Memory Module (DIMM), organized as a one-bank high-speed memory array. The 16Mx64 module is a single-bank DIMM that uses eight 16Mx8 DDR SDRAMs in 400 mil TSOP packages. The DIMM achieves high-speed data transfer rates of up to 266MHz. The DIMM is intended for use in applications operating from 100 MHz to 133 MHz clock speeds with data rates of 200 to 266 MHz. Clock enable CKE0 controls all devices on the DIMM.

• JEDEC Standard 200-Pin Small Outline Dual In-Line Memory Module (SO-DIMM)
• 16Mx64 Double Unbuffered DDR SO-DIMM based on 16Mx8 DDR SDRAM.
• Performance :
• Intended for 100 MHz and 133 MHz applications
• Inputs and outputs are SSTL-2 compatible
• VDD = 2.5Volt ± 0.2, VDDQ = 2.5Volt ± 0.2
• Single Pulsed RAS interface
• SDRAMs have 4 internal banks for concurrent operation
• Module has one physical bank
• Differential clock inputs
• Data is read or written on both clock edges
• DRAM DLL aligns DQ and DQS transitions with clock transitions.
• Address and control signals are fully synchronous to positive clock edge
• Programmable Operation:
    - DIMM CAS Latency: 2, 2.5
    - Burst Type: Sequential or Interleave
    - Burst Length: 2, 4, 8
    - Operation: Burst Read and Write
• Auto Refresh (CBR) and Self Refresh Modes
• Automatic and controlled precharge commands
• 12/10/2 Addressing (row/column/bank)
• 15.6 ms Max. Average Periodic Refresh Interval
• Serial Presence Detect
• Gold contacts
• SDRAMs in 66-pin TSOP Type II Package


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