NPN silicon planar epitaxial microwave power transistor in a SOT122A metal ceramic package.
• Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR
• Interdigitated structure provides high emitter efficiency
• Gold metallization realizes very good stability of the characteristics and excellent lifetime
• Multicell geometry gives good balance of dissipated power and low thermal resistance.
Intended for use in common emitter, class A power amplifiers for applications that require a high level of linearity.