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L2801 데이터시트 - Polyfet RF Devices

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L2801 SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR Polyfet-RF
Polyfet RF Devices Polyfet-RF
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L2801 데이타시트 PDF : L2801 pdf   
L2801 image

15.0 Watts Single Ended Package Style S02

HIGH EFFICIENCY, LINEAR
HIGH GAIN, LOW NOISE

General Description
Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.

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