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EFC060B 데이터시트 - Excelics Semiconductor, Inc.

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EFC060B Low Distortion GaAs Power FET Excelics
Excelics Semiconductor, Inc. 
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EFC060B 데이타시트 PDF : EFC060B pdf   
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Low Distortion GaAs Power FET

• +25.0dBm TYPICAL OUTPUT POWER
• 10.5dB TYPICAL POWER GAIN AT 12GHz
• HIGH BVgd FOR 10V BIAS
• 0.3 X 600 MICRON RECESSED “MUSHROOM” GATE
• Si3N4 PASSIVATION
• ADVANCED EPITAXIAL DOPING PROFILE PROVIDES HIGH POWER EFFICIENCY, LINEARITY AND RELIABILITY
• Idss SORTED IN 10mA PER BIN RANGE

 

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